A hole spin qubit in a fin field-effect transistor above 4 kelvin

One of the greatest challenges in quantum computing is scalability. Classical computing overcome this problem by integrating bilions of nm-scale fin field-effect transistors (FinFETs) on a silicon chip. Here, we operate a silicon FinFET as a hole spin qubit above 4 K. At this elevated temperature cooling power increases by order of magnitudes compared to typical qubit operation temperatures, such that on-chip integration with control electronics becomes feasible. We achieve fast electrical 3-axis control with speeds up to 150 MHz, single-qubit fidelities at the fault-tolerance threshold, and a Rabi quality factor greater than 87. The devices feature both industry compatibility and quality, yet are fabricated in a flexible and agile way accelerating future development. The work was published in Nature Electronics.

A hole spin qubit in a fin field-effect transistor above 4 kelvin
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