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Excitons in InGaAs quantum dots without electron wetting layer states

Matthias Löbl 9th August 2019

We have recently shown that InGaAs quantum dots can be grown without conduction band states of the so-called wetting layer. This work is the result of a collaboration with the Ruhr Universität Bochum and the Forschungszentrum Jülich. In the picture below, you see a transmission electron microscopy image of a quantum dot grown with the new technique.

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Excitons in InGaAs quantum dots without electron wetting layer states08.09.2019

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