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Latest News

Low-Noise GaAs Quantum Dots for Quantum Photonics

We have realized electrical tuning of the energy and the charge-state of GaAs quantum dots in AlGaAs. In contrast to previous work on the same system, the quantum dots do not suffer from a fluctuating charge-state. At the same time, we achieve linewidths that are just a few percent broader than the lifetime-limit. Our results are an important step towards connecting a quantum dot as a single-photon emitter to a rubidium memory in which quantum information can be stored. You can find our results in the open-access journal Nature Communications.

Low-Noise GaAs Quantum Dots for Quantum Photonics

Large-Range Frequency Tuning of a Narrow-Linewidth Quantum Emitter

We have achieved large-range frequency tuning of a single-photon emitter, a GaAs quantum dot in a bulk sample. The total tuning range is three orders of magnitude large than the quantum dot’s linewidth, which remains narrow throughout the entire tuning process. Our results are an important step towards building a hybrid system connecting a single-photon emitter to a rubidium quantum memory. You find our work published in Applied Physics Letters

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Large-Range Frequency Tuning of a Narrow-Linewidth Quantum Emitter

Interlayer excitons in bilayer MoS2

In our recent paper, we have shown that interlayer excitons in bilayer MoS2 exhibit both a high oscillator strength and highly tunable energies in an applied electric field. Owing to this very large tunability, we were able to optically probe the interaction between intra- and interlayer excitons as they were energetically tuned into resonance. These results have been published in Nature Nanotechnology. More details can also be read at UniNews.

Interlayer excitons in bilayer MoS2

Daniel Najer wins the Swiss Nanotechnology PhD award!

Daniel Najer was one of the 5 young scientists to win the Swiss Nanotechnology PhD award. The prize is awarded by the company Bühler for Daniel’s publication on an efficient light-matter interface, coupling a semiconductor QD strongly to an optical microcavity. Congratulations!

Read more here: https://nanoscience.ch/en/2020/07/15/five-awards-for-young-scientists/ 

Daniel Najer wins the Swiss Nanotechnology PhD award!

Strong-coupling of a semiconductor quantum dot in a microcavity

A coherent exchange of a single energy quantum between an “atom” (in our case a gated InAs quantum dot) and an optical cavity has been reported by our group in Nature. We achieve an atom-cavity Cooperativity of 150, and probe the transitions between singly and doubly excited photon-atom system using photon-statistics spectroscopy.

Strong-coupling of a semiconductor quantum dot in a microcavity

Correlations between optical properties and Voronoi-cell area of quantum dots

In our recent paper, we have shown that several optical properties of a quantum dot are correlated with the area of the so-called Voronoi cell surrounding it. In the image below, the Voronoi-diagram is shown in red for a few tens of quantum dots. The quantum dot positions are indicated as black dots.

Correlations between optical properties and Voronoi-cell area of quantum dots

Excitons in InGaAs quantum dots without electron wetting layer states

We have recently shown that InGaAs quantum dots can be grown without conduction band states of the so-called wetting layer. This work is the result of a collaboration with the Ruhr Universität Bochum and the Forschungszentrum Jülich. In the picture below, you see a transmission electron microscopy image of a quantum dot grown with the new technique.

Excitons in InGaAs quantum dots without electron wetting layer states
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