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Latest News

Surface passivation of GaAs mitigates surface-related losses in a microcavity

We found that GaAs surface passivation is key to minimize losses in a gated semiconductor microcavity and thus increase its quality factor by almost two orders of magnitude. The procedure not only eliminates a Franz-Keldysh-like surface loss inherent to gated semiconductor microcavities, but also mitigates the effect of surface scattering due to roughness. We elucidate these findings in our open-access publication at Physical Review Applied.

Surface passivation of GaAs mitigates surface-related losses in a microcavity

QSIT features Nadine Leisgang in #NCCRWomen 2021 campaign

Nadine Leisgang was featured by NCCR (National Centres of Competence in Research) in their new campaign #NCCRWomen. In the video, Nadine explains a bit about her work as a physicist at the University of Basel and her motivation to do science. Congratulations!

Read more here: https://nccr-qsit.ethz.ch/equal-opportunity/NCCRWomen_campaign.html

Video here: https://www.youtube.com/watch?v=3eaSz3fry84

 

QSIT features Nadine Leisgang in #NCCRWomen 2021 campaign

A record-breaking single photon source

In our recent publication in Nature Nanotechnology we present the results of our record-breaking single photon source. The source, based on InAs quantum dots coupled in a carefully designed open-access microcavity, is able to emit up to 1 billion single photons per second with an end-to-end efficiency of 57%. Furthermore, photons present high single-photon purity (98%) and preserve high coherence (HOM visibility = 97%) in timescales of up to 1.5us. This result allows for significant improvement in quantum processing with photons. More information can be found at UniNews.

A record-breaking single photon source

Low-Noise GaAs Quantum Dots for Quantum Photonics

We have realized electrical tuning of the energy and the charge-state of GaAs quantum dots in AlGaAs. In contrast to previous work on the same system, the quantum dots do not suffer from a fluctuating charge-state. At the same time, we achieve linewidths that are just a few percent broader than the lifetime-limit. Our results are an important step towards connecting a quantum dot as a single-photon emitter to a rubidium memory in which quantum information can be stored. You can find our results in the open-access journal Nature Communications.

Low-Noise GaAs Quantum Dots for Quantum Photonics

Large-Range Frequency Tuning of a Narrow-Linewidth Quantum Emitter

We have achieved large-range frequency tuning of a single-photon emitter, a GaAs quantum dot in a bulk sample. The total tuning range is three orders of magnitude large than the quantum dot’s linewidth, which remains narrow throughout the entire tuning process. Our results are an important step towards building a hybrid system connecting a single-photon emitter to a rubidium quantum memory. You find our work published in Applied Physics Letters

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Large-Range Frequency Tuning of a Narrow-Linewidth Quantum Emitter

Interlayer excitons in bilayer MoS2

In our recent paper, we have shown that interlayer excitons in bilayer MoS2 exhibit both a high oscillator strength and highly tunable energies in an applied electric field. Owing to this very large tunability, we were able to optically probe the interaction between intra- and interlayer excitons as they were energetically tuned into resonance. These results have been published in Nature Nanotechnology. More details can also be read at UniNews.

Interlayer excitons in bilayer MoS2

Daniel Najer wins the Swiss Nanotechnology PhD award!

Daniel Najer was one of the 5 young scientists to win the Swiss Nanotechnology PhD award. The prize is awarded by the company Bühler for Daniel’s publication on an efficient light-matter interface, coupling a semiconductor QD strongly to an optical microcavity. Congratulations!

Read more here: https://nanoscience.ch/en/2020/07/15/five-awards-for-young-scientists/ 

Daniel Najer wins the Swiss Nanotechnology PhD award!
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