Laser writing of low-charge-noise nitrogen-vacancy centers in diamond

In our recent publication in ACS Photonics, we report on the pulsed-laser-induced generation of high-quality nitrogen-vacancy (NV) centers in diamond facilitated by a solid-immersion lens (SIL). The SIL enables laser writing at energies as low as 5.8 nJ per pulse and allows vacancies to be formed close to a diamond surface without inducing surface graphitization. We present samples in which NV center arrays were laser-written across the full diamond thickness, all presenting narrow optical linewidth distributions with means down to 62.1 MHz. The linewidths include the effect of long-term spectral diffusion induced by a 532 nm repump laser for charge-state stabilization, underlining the extremely low charge-noise environment of the created color centers.

Laser writing of low-charge-noise nitrogen-vacancy centers in diamond
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