In our recent publication at Applied Physics Letters we present our work on silicon-finFET quantum dots with perfectly self-aligned 2nd gate layer and gate lengths down to 15 nm. The fabrication is industry compatible and scalable and gives very high-quality devices. We observe Pauli spin blockade and extract the hole g-factor and strong spin-orbit coupling with spin-orbit length of ~50 nm, thus paving the way for scalable silicon spin qubits with fast, all-electrical control. Device fabrication and measurements were done in collaboration between IBM Zürich and University of Basel team.